Monocrystalline silicon wafer (double-sided polishing)
Features: High purity silicon si single crystal substrate, N / P type optional, resistivity 0.0001-100 ohm, optional

Growth mode: straight pull

Crystal orientation: [111] / [100] / [110]

Flatness: <1 micron (measure the overall warpage)

Surface roughness: about 5 angstroms (measure the surface micro-topography)

Uses: 1. PVD / CVD coating as substrate

       2. Used as XRD (X-ray diffraction analysis), SEM (scanning electron microscope), FTIR infrared, fluorescence spectrum analysis test substrate, AFM (atomic force microscope)

       3. Sample carrier for synchrotron radiation experiment

       4. The substrate for molecular beam epitaxial growth

       5. Semiconductor lithography process, etc.

Remarks: Other sizes can be customized and invoiced.

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