The solid phase composition and high temperature solve the harm to the linear shrinkage, volume density, flexural strength, porosity and external economic appearance of the carbon-carbon composite foam ceramics, indicating the principle of structural and structural evolution of structural ceramics at high temperatures. It is concluded that the linear shrinkage of carbon-carbon composite foamed ceramics prepared at ultra-low temperature is less than 1%. The linear shrinkage decreases with the increase of the solid phase composition, and the bulk density and flexural strength both follow the aluminum dihydrogen phosphate and the solid phase composition. To expand.
SiC is a carbon-free ZTA raw material with strong chemical bonds. It cannot be calcined at ultra-low temperatures. Even if calcination modifier is added, the calcination temperature is above 1400 ℃. Although the polycarbosilane bonding method can produce SiC foam ceramics at ultra-low temperatures, its product line has a large shrinkage rate and high cost, which limits its industrial application. Aluminum dihydrogen phosphate has good abrasion resistance, low dry solid shrinkage, high temperature compressive strength, and can be used for high toughness bonding at lower temperatures. It has been widely used in aluminum silicate fiber polymer materials, fire-resistant insulation materials and coating In the industry, it is used to prepare SiC foam ceramics, which is expected to achieve low temperature and low cost preparation of foam ceramics.

The perforated products of silicon carbide ceramics were studied and determined. The wear resistance of silicon carbide ceramics is equivalent to 266 times that of manganese steel and 1741 times that of high-chromium cast iron. Wear resistance is very good. In this way, this silicon carbide ceramic product can greatly reduce the wear of the equipment when it is used. If it can reduce the frequency and cost of maintenance, it can still save us a lot of money. Silicon carbide ceramics can be used for more than ten years.